| Ident. | Authors (with country if any) | Title |
|---|
| 000189 |
| Quantum dot photonics : edge emitter, amplifier and VCSEL |
| 000190 |
| Quantum dot diode lasers for optical communication systems |
| 000223 |
| The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots |
| 000241 |
| MBE-grown metamorphic lasers for applications at telecom wavelengths |
| 000331 |
| 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance |
| 000348 |
| QD lasers : Physics and applications |
| 000349 |
| Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm |
| 000367 |
| Long-wavelength lasers based on metamorphic quantum dots |
| 000372 |
| High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system |
| 000374 |
| High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers |
| 000403 |
| Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range |
| 000514 |
| Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm |
| 000570 |
| Complete suppression of filamentation and superior beam quality in quantum-dot lasers |
| 000611 |
| Recent advances in long wavelength GaAs-based quantum dot lasers |
| 000636 |
| MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates |
| 000654 |
| InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain |
| 000668 |
| Formation specifity of InAs/GaAs submonolayer superlattice |
| 000708 |
| Spectrotemporal response of 1.3 μm quantum-dot lasers |
| 000816 |
| Long-wavelength quantum-dot lasers |
| 000885 |
| Strain engineering of self-organized InAs quantum dots |
| 000895 |
| 1.3 μm Vertical Microcavities with InAs/InGaAs Quantum Dots and Devices Based on Them |
| 000964 |
| Optical and structural properties of self-organized InGaAsN/GaAs nanostructures |
| 000985 |
| InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range |
| 000991 |
| Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation |
| 000A16 |
| 1300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots |
| 000A17 |
| 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices |
| 000A18 |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000A21 |
| Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors |
| 000A26 |
| Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm |
| 000A84 |
| Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range |
| 000A85 |
| Power Conversion Efficiency of Quantum Dot Laser Diodes |
| 000A90 |
| Long-Wavelength Emission in InGaAsN/GaAs Heterostructures with Quantum Wells |
| 000B05 |
| Hole and electron emission from InAs quantum dots |
| 000B12 |
| Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots |
| 000B29 |
| A Spatially Single-Mode Laser for a Range of 1.25-1.28 μm on the Basis of InAs Quantum Dots on a GaAs Substrate |
| 000C10 |
| 3.5 W continuous wave operation from quantum dot laser |
| 000C12 |
| 0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots |
| 000C34 |
| Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm |
| 000C45 |
| Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates |
| 000C56 |
| Heteroepitaxial growth of InAs on Si: a new type of quantum dot |
| 000C58 |
| Gain characteristics of quantum-dot injection lasers |
| 000C65 |
| Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands |
| 000C66 |
| Lasing at a wavelength close to 1.3 μm in InAs quantum-dot structures |
| 000C92 |
| InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm |
| 000C97 |
| InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm |
| 000D09 |
| Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host |
| 000D34 |
| Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices |
| 000D55 |
| Self-organized InAs quantum dots in a silicon matrix |
| 000D73 |
| Molecular beam epitaxy (MBE) growth of composite (In, Al)As/(In, Ga)As vertically coupled quantum dots and their application in injection lasers |
| 000D80 |
| Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots |
| 000D95 |
| Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures : Special issue papers on quantum dots |
| 000E06 |
| Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status |
| 000E18 |
| 1.75 μm emission from self-organized InAs quantum dots on GaAs |
| 000E73 |
| High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser |
| 000F07 |
| Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates |
| 000F31 |
| Optical properties of InAlAs quantum dots in an AlGaAs matrix |
| 000F37 |
| Lateral association of vertically-coupled quantum dots |
| 000F43 |
| Injection lasers based on InGaAs quantum dots in an AlGaAs matrix |
| 000F52 |
| Formation of InAs quantum dots on a silicon (100) surface |
| 001005 |
| Quantum-dot lasers: Principal components of the threshold current density |
| 001044 |
| Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix |
| 001060 |
| Thermal stability of vertically coupled InAs-GaAs quantum dot arrays |
| 001062 |
| Modulation of a quantum well potential by a quantum-dot array |
| 001146 |
| Photoluminescence of arrays of vertically coupled, stressed InAs quantum dots in a GaAs (100) matrix |
